Design and understanding of solid-state and crystalline materials
Paper
Article citation: Junqing Hu, CrystEngComm, 2010, DOI: 10.1039/b910489p
New nanowire heterostructures: SnO2 nanowires epitaxial growth on Si bicrystalline nanowires
Junqing Hu, Zhigang Chen, Rujia Zou and Yangang Sun
Combining thermal decomposition and evaporation of a mixed powder of SiO and SnO2 under careful temperature control resulted in SnO2 nanowires epitaxial growth on Si bicrystalline nanowires, forming new three layered radial Si–Si–SnO2 nanowire heterostructures, which the nature of interfacial regions and phase boundaries are different from the characteristics of axial composite nanowires. Each Si–Si–SnO2 composite nanowire has a uniform diameter along its whole length; the typical diameter of the nanowires ranges from 50 to 150 nm, and the diameters of Si bicrystalline nanowires and SnO2 nanowires within a nanowire heterostructure are
30–100 nm. These Si–Si–SnO2 nanowire heterostructures display unique intensive green luminescence emission compared to that of UV emissions of the near-band edge of SnO2.
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